Nyderlandai – Laboratorinė, optinė ir precizinė įranga (išskyrus akinius) – "European Tender Dry Etcher

Nyderlandai – Laboratorinė, optinė ir precizinė įranga (išskyrus akinius) – "European Tender Dry Etcher

I dalis: Perkančioji organizacija

I.1) Pavadinimas ir adresai:

Oficialus pavadinimas: Universiteit Twente
Adresas: Drienerlolaan 5
Miestas: Enschede
Pašto kodas: 7522NB
Šalis: Nyderlandai
Asmuo ryšiams:
El-paštas: c.delfgaauw@utwente.nl
Interneto adresas (-ai):
Pagrindinis adresas: https://www.utwente.nl

II dalis: Objektas

II.1.1) Pavadinimas:

European Tender Dry Etcher
Nuorodos numeris: EB-OUT 6330

II.1.2) Pagrindinis BVPŽ kodas:

38000000 Laboratorinė, optinė ir precizinė įranga (išskyrus akinius)

II.1.3) Sutarties tipas:

Kita

II.1.4) Trumpas aprašymas:

The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity.  The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry. The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8. The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures. The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy.  The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.  

II.2) Aprašymas:

II.2.1) Kitas (-i) šio pirkimo BVPŽ kodas (-ai):

38000000 Laboratorinė, optinė ir precizinė įranga (išskyrus akinius)